A Detailed Study on Preparation and Some Physical Properties of CuxZn1-xS Thin Films Deposited by Metal Organic Chemical Vapour Deposition Technique

Copper Zinc Sulphide (CuxZn1-xS) thin films were prepared and deposited using metal organic
chemical vapour deposition (MOCVD) technique. The films were studied using Rutherford
backscattering (RBS) spectroscopy for elemental composition and thickness, X-ray diffraction (XRD)
for crystallographic structure, scanning electron microscopy (SEM) for surface morphology and
Ultraviolet-Visible spectroscopy analysis for optical characterization. Experimental results showed that
all the films were polycrystalline with good adherent with the substrate. The direct optical band gap
changes from 2.20 eV to 3.42 eV for different values of x with an average transmittance of above
80%. SEM analysis showed that the deposited films are dense in nature with well defined grains of
different sizes. The study demonstrates that the properties of the deposited films were strongly
influenced by the copper / zinc concentrations in CuxZn1-xS matrix. The obtained results indicate the
suitability of using the deposited films in various optoelectronics applications such as thermal control
window coatings for cold climates, antireflection coatings, light emitting devices as well as heterojunction
in solar cells. In particular, this study have provided another method of depositing
copper zinc sulphide thin films for industral applications.